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| GaAs SP3T 2.5V High Power Switch DC - 2.5 GHz Preliminary Feb 12 2002 MASWSS0033 Features * * * * * * Low Harmonic Knee Voltage < 2.5V Low Harmonics > 65 dBc at +34 dBm & 1 GHz Low Insertion Loss 0.45 dB at 1 GHz High Isolation 18.5 dB at 2 GHz FQFP 12-lead 3x3mm Low Profile Package 0.5 micron GaAs pHEMT Process Functional Schematic GND ANT 100 pF PIN 1 V3 RF3 100 pF GND V1 RF1 100 pF Description M/A-COM's MASWSS0033 is a GaAs PHEMT MMIC SP3T high power switch in a low cost miniature FQFP 12-lead 3x3mm thin profile package. This package represents a lower profile than standard FQFP style, featuring a 0.8mm maximum thickness. The MASWSS0033 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well othe handset and related applications. This part can be used in all systems operating up to 2.5 GHz requiring high power at low control voltage. The MASWSS0033 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. GND GND GND RF2 100 pF Pin Configuration PIN No. 1 2 3 4 PIN Name V3 RF3 GND GND RF2 V2 GND RF1 V1 GND ANT GND GND (paddle) Description Control 3 RF Port 3 RF Ground RF Ground RF Port 2 Control 2 RF Ground RF Port 1 Control 1 RF Ground Antenna Port RF Ground RF Ground Absolute Maximum Ratings 1 Parameter Max Input Power (0.5 - 2.5 GHz, 2.5V Control) Operating Voltage Operating Temperature Storage Temperature Absolute Maximum +38 dBm +8.5 volts -40 oC to +85 oC -65 oC to +150 oC 5 6 7 8 9 10 11 12 13 1. Exceeding any one or combination of these limits may cause permanent damage. V2 GaAs SP3T 2.5V High Power Switch MASWSS0033 V 1.04 Parameter Insertion Loss Test Conditions DC - 1 GHz 1 - 2 GHz 2 - 2.5 GHz DC - 1 GHz 1 - 2 GHz 2 - 2.5 GHz DC - 2.5 GHz Vc = 0V/2.5V 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V 10% to 90% RF, 90% to 10% RF Two Tone +22 dBm, 1 MHz Spacing, 820 MHz, Two Tone +19 dBm, 1 MHz Spacing, 1950 MHz, Units dB dB dB dB dB dB dB dBm dBc dBc S dBm dBm Min. Typ. 0.5 0.6 0.8 Max. 0.65 0.8 1.0 Isolation 23 18 15 25 18.5 16 20 38 Return Loss P1dB 2 nd Harmonic 65 65 1 59 57 3rd Harmonic Trise, Tfall Cross Modulation ANT - CELL3 ANT - PCS3 Cross Modulation ANT - CELL ANT - PCS Ton, Toff Transients Gate Leakage Two Tones +22 dBm @ 820 & 821 MHz, One Tone -27 dBm @ 865 MHz Two Tones +17 dBm @ 1950 & 1951 MHz, One Tone -27 dBm @ 1870 MHz 50% control to 90% RF, and 50% control to 10% RF In Band |Vc| = 2.5V dBm dBm S mV uA -108 TBD 1 10 100 2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 100 pF for 0.5 GHz - 2.5 GHz. 3. IP3 slope versus input power is approximately 1.5:1. Truth Table 4 V1 +2.5 to +5V 0 + 0.2V 0 + 0.2V V2 0 + 0.2V +2.5 to +5V 0 + 0.2V V3 0 + 0.2V 0 + 0.2V +2.5 to +5V ANT- RF1 On Off Off ANT - RF2 Off On Off ANT - RF3 Off Off On 4. External DC blocking capacitors are required on all RF ports 2 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP3T 2.5V High Power Switch Typical Performance Curves Insertion Loss vs. Frequency, 25 oC, 100 pF 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 0.5 1 1.5 2 2.5 MASWSS0033 V 1.04 Isolation vs. Frequency, 25 oC, 100 pF 0 -5 -10 -15 -20 -25 -30 -35 0.5 1 Frequency (GHz) Frequency (GHz) 1.5 2 2.5 Harmonic Rejection vs. Frequency, 25 oC, 100 pF -60 Pin = +34 dBm @ 1 GHz -65 -70 3rd Harmonic -75 2nd Harmonic -80 -85 2 3 4 5 Vctrl (V) 3 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP3T 2.5V High Power Switch FQFP 12-lead 3x3 mm Low Profile MASWSS0033 V 1.04 4 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP3T 2.5V High Power Switch Handling Procedures The following precautions should be observed to avoid damage: MASWSS0033 V 1.04 Static Sensitivity Gallium Arsenide Integrated Circuits are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. Ordering Information Part Number MASWSS0033 MASWSS0033TR MASWSS0033SMB Package FQFP-N 12-lead Thin Plastic Package 1000 piece reel Sample Test Board 5 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. |
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